深圳市轩成微电子有限公司

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Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V

• JEDEC standard 1.8V I/O (SSTL_18-compatible)

• Double data rate interface: two data transfers

per clock cycle

• Differential data strobe (DQS, DQS)

• 4-bit prefetch architecture

• On chip DLL to align DQ and DQS transitions

with CK

• 8 internal banks for concurrent operation

• Programmable CAS latency (CL) 3, 4, 5, 6, and

7 supported

• Posted CAS and programmable additive latency

(AL) 0, 1, 2, 3, 4, 5, and 6 supported

• WRITE latency = READ latency - 1 tCK

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength, full and

reduced strength options

• On-die termination (ODT)