深圳市轩成微电子有限公司

The 256Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 268,435,456 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 67,108,864-bit bank is organized as 4,096 rows by 512 columns by 32 bits. The 256MbSDRAM includes anAUTOREFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 256Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during

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