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TheISSIIS61C5128AL/ASandIS64C5128AL/ASarehighspeed,
4,194,304-bit static RAMs organized as 524,288
words by 8 bits. They are fabricated using ISSI's highperformanceCMOStechnology.Thishighly
reliableprocess
coupled with innovative circuit design techniques, yields
access times as fast as 12 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
TheIS61C5128AL/ASandIS64C5128AL/ASarepackaged
intheJEDECstandard36-pinSOJ(400-mil),32-pinsTSOP-I,
32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II packages