深圳市轩成微电子有限公司

专营ISSI进口原装存储器，假一罚十。欢迎联系。QQ：2851185157

FEATURES

• Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V

• JEDEC standard 1.8V I/O (SSTL_18-compatible)

• Double data rate interface: two data transfers

per clock cycle

• Differential data strobe (DQS, DQS)

• 4-bit prefetch architecture

• On chip DLL to align DQ and DQS transitions

with CK

• 4 internal banks for concurrent operation

• Programmable CAS latency (CL) 3, 4, 5, and 6

supported

• Posted CAS and programmable additive latency

(AL) 0, 1, 2, 3, 4, and 5 supported

• WRITE latency = READ latency - 1 tCK

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength, full and

reduced strength options

• On-die termination (ODT)