相关证件：
会员类型：
会员年限：11年
岳小姐 
电话：0755-83759232
手机：13410243748
IS61NLP25618A-200TQLI 专营ISSI进口原装假一赔十，欢迎联系QQ2851185157
The 4 Meg 'NLP/NVP' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 128K words by 32 bits, 128K words by 36
bits, and 256K words by 18 bits, fabricated with ISSI's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input.Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH.In this state the internal
device will hold their previous values.
AllRead,WriteandDeselect cyclesareinitiatedby theADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated
by the rising edge of the clock inputs and when WE is
LOW. Separate byte enables allow individual bytes to be
written.
A burst mode pin (MODE) defines the order of the burst
sequence.WhentiedHIGH,theinterleavedburst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
