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TheISSIIS62/65WV6416DALLandIS62/65WV6416DBLL
are high-speed,1MbitstaticRAMsorganizedas64Kwords
by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields highperformance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LBand UBare HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
TheIS62/65WV6416DALLandIS62/65WV6416DBLLare
packaged in the JEDEC standard 48-pin mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II).
